EFFECT OF ETCHING TIME OF PS ON THE EFFICIENY OF CLALPC/PS DSSC

Abstract

The nanostructured porous silicon (PS) samples were prepared by electrochemical anodic dissolution of doped silicon (p-Si) for (100) orientations at constant current density of 30mA/cm2 for etching times 10, 20, 40 and 60 min. Then these samples were sensitized with chloroaluminium phthalocyanine (ClAlPc) to fabricate Dye-sensitized solar cells (DSSCs). The diffuse reflection spectra (DRS) curves of sensitized porous silicon (ClAlPc/PS) had a wide absorption range of 450–750 nm, due to ClAlPc as a sensitizer in PS. The bandgap measurements from UV- Vis and photoluminescence measurements are in the range of 1.5 to 1.8 eV. The photocurrent and photovoltage of the cells were measured with an active area of 1 cm2 using Keithely source meter in the condition of illumination (80 mW cm−2). The open circuit voltage (Voc), short circuit current (Jsc) and fill factor (FF) of the DSSC were calculated and analyzed. The sensitized sample prepared at 30mA/ cm2 for etching time 60 min with 48% of HF shows better conversion efficiency of 2.8 %.